10.01.17 16:15

Semiconductor radiation sensors based on group III-nitrides

Martin Stutzmann (TUM)

The group III-nitrides (BN, AlN, GaN, InN and their alloys) are direct semiconductors with industrial scale applications in optoelectronics (blue and white LEDs) as well as high frequency/high power electronics (high electron mobility transistors, HEMTs). In addition, a lot of research has focused on potential applications of III-nitride thin films as sensors (biosensors, strain gauges, and radiation sensors) because of their superior mechanical, chemical and thermal stability, their particular piezo- and pyroelectrical properties and their radiation hardness.

In this presentation, I will give a brief general introduction to the III-nitride materials system and then discuss different radiation sensor concepts: broad and narrow band UV sensors and cameras, neutron and proton detectors, and HEMT-based X-ray sensors.


Category: Kolloquium